Light-induced irreversible structural phase transition in trilayer graphene
نویسندگان
چکیده
منابع مشابه
Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene
We calculate the electronic band structure of ABA-stacked trilayer graphene in the presence of external gates, using a self-consistent Hartree approximation to take account of screening. In the absence of a gate potential, there are separate pairs of linear and parabolic bands at low energy. A gate field perpendicular to the layers breaks mirror reflection symmetry with respect to the central l...
متن کاملIon irradiation induced structural and electrical transition in graphene.
The relationship between the electrical properties and structure evolution of single layer graphene was studied by gradually introducing the gallium ion irradiation. Raman spectrums show a structural transition from nano-crystalline graphene to amorphous carbon as escalating the degree of disorder of the graphene sample, which is in correspondence with the electrical transition from a Boltzmann...
متن کاملTunable infrared phonon anomalies in trilayer graphene.
Trilayer graphene in both ABA (Bernal) and ABC (rhombohedral) stacking sequences is shown to exhibit intense infrared absorption from in-plane optical phonons. The phonon feature, lying at ~1580 cm(-1), changes strongly with electrostatic gating. For ABC-stacked graphene trilayers, we observed a large enhancement in phonon absorption amplitude, as well as softening of the phonon mode, as the Fe...
متن کاملInteger quantum Hall effect in trilayer graphene.
By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of ν=2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers indu...
متن کاملPressure-induced iso-structural phase transition and metallization in WSe2
We present in situ high-pressure synchrotron X-ray diffraction (XRD) and Raman spectroscopy study, and electrical transport measurement of single crystal WSe2 in diamond anvil cells with pressures up to 54.0-62.8 GPa. The XRD and Raman results show that the phase undergoes a pressure-induced iso-structural transition via layer sliding, beginning at 28.5 GPa and not being completed up to around ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Light: Science & Applications
سال: 2020
ISSN: 2047-7538
DOI: 10.1038/s41377-020-00412-6